ANNEALING EFFECTS ON OPTOELECTRONIC PROPERTIES OF SPUTTERED AND THERMALLY EVAPORATED INDIUM-TIN-OXIDE FILMS

Authors
MORGAN DV ALIYU YH BUNCE RW SALEHI A
Citation
Dv. Morgan et al., ANNEALING EFFECTS ON OPTOELECTRONIC PROPERTIES OF SPUTTERED AND THERMALLY EVAPORATED INDIUM-TIN-OXIDE FILMS, Thin solid films, 312(1-2), 1998, pp. 268-272
Citations number
12
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
312
Issue
1-2
Year of publication
1998
Pages
268 - 272
Database
ISI
SICI code
0040-6090(1998)312:1-2<268:AEOOPO>2.0.ZU;2-8
Abstract
The effects of post-deposition annealing in different atmospheres, on electrical anti optical properties of sputtered and thermally evaporat ed indium tin oxide (ITO) films, have been investigated. Significant v ariations in resistivity, mobility, carrier concentration and transpar ency were observed. X-ray diffraction patterns (XRD) and scanning elec tron microscopy (SEM) showed changes in the film grain structures afte r thermal treatment, Optimum properties were obtained under N-2/H-2 co nditions giving resistivity values around 3 x 10(-4) Omega cm and tran smittance values more than 90%. (C) 1995 Elsevier Science S.A.