EFFECT OF ELECTRON-IRRADIATION ON THE PHOTOVOLTAIC CHARACTERISTICS OFGAAS P-N-JUNCTIONS

The influence of electron irradiation (Phi = 5 x 10(15)-1 x 10(17) cm( -2)) on photovoltaic characteristics of epitaxial and diffusion GaAs p -n junctions is investigated depending on the directions of electron b eam and diffusion flux of acceptor impurity. For conditions of coincid ence of these directions, degradation of photovoltaic parameters J(SC) (short-circuit photocurrent density) and V-OC (open-circuit voltage) of p-n junctions is larger than degradation of these parameters for op posite directions. The observed results are discussed on the basis of the model of drag of atoms lions) by fast electrons (i.e., due to orig in of the 'electron wind'), that is caused by direct impact and transf er of part of the electrons' impulse to the impurity atoms. This, in t urn stimulates the redistribution of concentrations of impurity in the p-n junction region and therefore, changes parameters of GaAs photoce lls. (C) 1998 Elsevier Science S.A.