SELECTIVE EPITAXY OF CARBON-TETRACHLORIDE-DOPED GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

A selectively confined V-shaped carbon-tetrachloride-doped GaAs epilay er grown inside a U-groove by one-step growth has been successfully fa bricated on a patterned GaAs substrate by atmospheric pressure metalor ganic chemical vapor deposition. A dramatic lateral growth enhancement was obtained by supplying carbon tetrachloride and allowed selective epitaxy. This one-step maskless selective epitaxy does not require any masking material. The selective epitaxy has also been demonstated in a U-shaped groove array.