DEEP-SUBMICRON SINGLE-GATE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) TECHNOLOGY USING CHANNEL PREAMORPHIZATION

Authors
MIYAKE M KOBAYASHI T SAKAKIBARA Y DEGUCHI K TAKAHASHI M
Citation
M. Miyake et al., DEEP-SUBMICRON SINGLE-GATE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) TECHNOLOGY USING CHANNEL PREAMORPHIZATION, JPN J A P 1, 37(3B), 1998, pp. 1050-1053
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
37
Issue
3B
Year of publication
1998
Pages
1050 - 1053
Database
ISI
SICI code
Abstract
Deep-submicron single-gale complementary metal oxide semiconductor (CM OS) technology using channel preamorphization (CP) is described. CP im proves the short-channel behavior of nMOS as well as MOS because sharp and shallow boron channel doping is achieved. CP also suppresses reve rse short-channel effects in nMOS. Utilizing CP effectively: deep-subm icron single-gate CMOS with good short-channel behavior has been fabri cated.