CHARACTERISTICS OF METAL FERROELECTRIC/INSULATOR/SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING A PT/SRBI2TA2O9/Y2O3/SI STRUCTURE/

For the fabrication of metal/ferroelectric/insulator/semiconductor fie ld effect transistors (MEFISFETs), SrBi2Ta2O9 (SBT) film was formed on to Y2O3 layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96-1.38 V when the gate vol tage varied from 5 to 7 V. Current-voltage characteristic and transcon ductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties.