ELECTRICAL CHARACTERISTICS OF NEURON OSCILLATION CIRCUITS COMPOSED OFMOSFETS AND COMPLEMENTARY UNIJUNCTION TRANSISTORS

A pulse frequency modulation (PFM) type neuron circuit composed of a m etal-oxide-semiconductor field effect transistor (MOSFET) and a comple mentary unijunction transistor (CUJT) was fabricated on a silicon-on-i nsulator (SOI) structure as an approach to an adaptive learning neuron circuit using a metal-ferroelectric-semiconductor field effect transi stor (MFSFET). The output pulse interval was controlled by changing th e pulse duty ratio of input pulse signals as well as the magnitude of the DC input voltage. These results demonstrate that the electrical pr operties of MOSFET neuron circuits are good enough for future neural n etworks, that can be expected to be realized by replacing the MOSFET w ith an MFSFET. Anew circuit using a complementary MOS (CMOS) Schmitt-t rigger configuration is also proposed for improving output pulse ampli tude.