THE EFFECT OF ISOPROPYL-ALCOHOL ADSORPTION ON THE ELECTRICAL CHARACTERISTICS OF THIN OXIDE

The effect of isopropyl alcohol (IPA) adsorption on the electrical Cha racteristics of thin oxide has been investigated. Metaloxide-semicondu ctor(MOS) capacitors were fabricated on Si substrate after IPA was int entionally adsorbed on the substrate surfaces. The leakage current was raised in the low electric field region for the 5-nm-thick thin oxide due to increased TPA adsorption, but the leakage current was not affe cted in the 8- and 10-nm-thick oxides. Using X-ray photoelectron spect roscopy, we found that the heat treatment creates C-SI bonds in the ox ide due to organic adsorbates including IPA. These bonds appear likely to cause weak points or prevent uniform oxidation. A pre-annealing tr eatment was found to be effective in suppressing the formation of the C-Si bonds.