PRECIPITATION OF BORON IN HIGHLY BORON-DOPED SILICON

The clustering of boron in highly boron-doped silicon and its influenc e on electrical deactivation are reported. Highly boron-doped crystall ine silicon was fabricated as a starting material by solid phase epita xy of boron-doped amorphous silicon films. Boron can be supersaturated in the crystallized samples annealed at a low temperature of about 60 0 degrees C. A lot of precipitates, containing clustered boron, were o bserved in the samples annealed at high temperatures of about 1000 deg rees C. The chemical states and the atomic configuration of boron in s amples annealed at various temperatures corresponded to the electrical deactivation of boron.