CHARACTERIZATION OF CORNER-INDUCED LEAKAGE CURRENT OF A SHALLOW SILICIDED N(+) P JUNCTION FOR QUARTER-MICRON MOSFETS/

In addition to the conventional area and perimeter intensive junctions , a corner intensive junction has been added to characterize the rever se current mechanism of a silicided shallow n(+)/p junction for quarte r-micron metal oxide silicon field effect transistors (MOSFETs). The n (+)/p junction is fabricated using the novel quarter micron technology . The corner intensive junction shows a much larger reverse current th an the area and perimeter intensive junctions. The main causes of reve rse current in these three junctions are Poole-Frenkel barrier lowerin g and possibly phonon-assisted tunneling. Although additional phosphor us ion implantation improves junction quality of the area and perimete r diodes, it has had little effect on the corner diode. The corner dio de shows a strong electric field dependence in spite of additional pho sphorus ion implantation. The main cause of corner leakage current is believed to be the increased trap density and electric field at the co rner area. As the MOSFET device shrinks, the corner leakage component will be important.