NEW 3-DIMENSIONAL WAFER BONDING TECHNOLOGY USING THE ADHESIVE INJECTION METHOD

Authors
MATSUMOTO T SATOH M SAKUMA K KURINO H MIYAKAWA N ITANI H KOYANAGI M
Citation
T. Matsumoto et al., NEW 3-DIMENSIONAL WAFER BONDING TECHNOLOGY USING THE ADHESIVE INJECTION METHOD, JPN J A P 1, 37(3B), 1998, pp. 1217-1221
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
37
Issue
3B
Year of publication
1998
Pages
1217 - 1221
Database
ISI
SICI code
Abstract
A new three-dimensional (3D) wafer bonding technology using the adhesi ve injection method has been proposed, in order to realize a real-time micro-vision system and a real shared memory. Several key technologie s for 3D LSI, such as deep trench formation for buried interconnection , wafer grinding and chemical-mechanical polishing, wafer alignment an d wafer bonding using the adhesive injection method, have been develop ed.