GATE OXIDE DEFECTS IN MOSLSIS AND OCTAHEDRAL VOID DEFECTS IN CZOCHRALSKI SILICON

The origin of insulator defects in gate oxides and poly-oxides was tho roughly investigated. We clarified that octahedral void defects origin ating in a Czochralski silicon substrate are responsible for gate-oxid e defects and that polyhedral void defects produced during annealing o r oxidation are responsible for defects in insulators on poly-silicon. These are expected to be the principal defects affecting the yield an d reliability of next-generation metal-oxide-silicon large-scale integ rated-circuits or flash memories. In addition, defects in the buried o xides of a silicon-on-insulator substrate were also examined. Octahedr al defects or polyhedral defects were observed just under the buried-o xide defects. Octahedral defects and polyhedral defects may be common in standard metal-oxide-silicon large-scale integrated-circuits, flash memories, and silicon-on-insulator substrates.