MEDIUM FIELD BREAKDOWN ORIGIN ON METAL-OXIDE-SEMICONDUCTOR CAPACITOR CONTAINING GROWN-IN CZOCHRALSKI SILICON CRYSTAL DEFECTS

The medium field breakdown of metal oxide semiconductor capacitor due to the Czochralski silicon crystal originated defect was studied in vi ew of both electrical and structural analyses. By analyzing the local tunneling current which initiates the medium field breakdown, phenomen ological defect sizes were calculated from the local tunneling current by assuming the local oxide thinning model. They were the defect diam eter as 5 to 50 nm and the local oxide thinning as similar to 25 nm, T hese data were confirmed by direct defect observation using high preci sion defect isolation procedure followed by transmission electron micr oscopy. Direct observation revealed that the real defect size was simi lar to 200 nm which correlated well with other recently reported works . The real local oxide thinning, however, was not as large as phenomen ological calculation. To explain the differences between phenomenologi cal and real local oxide thinning, the poly-Si grain protrusion induce d stress model was proposed.