M. Tamatsuka et al., MEDIUM FIELD BREAKDOWN ORIGIN ON METAL-OXIDE-SEMICONDUCTOR CAPACITOR CONTAINING GROWN-IN CZOCHRALSKI SILICON CRYSTAL DEFECTS, JPN J A P 1, 37(3B), 1998, pp. 1236-1239
The medium field breakdown of metal oxide semiconductor capacitor due
to the Czochralski silicon crystal originated defect was studied in vi
ew of both electrical and structural analyses. By analyzing the local
tunneling current which initiates the medium field breakdown, phenomen
ological defect sizes were calculated from the local tunneling current
by assuming the local oxide thinning model. They were the defect diam
eter as 5 to 50 nm and the local oxide thinning as similar to 25 nm, T
hese data were confirmed by direct defect observation using high preci
sion defect isolation procedure followed by transmission electron micr
oscopy. Direct observation revealed that the real defect size was simi
lar to 200 nm which correlated well with other recently reported works
. The real local oxide thinning, however, was not as large as phenomen
ological calculation. To explain the differences between phenomenologi
cal and real local oxide thinning, the poly-Si grain protrusion induce
d stress model was proposed.