THE ANALYSIS OF THE DEFECTIVE CELLS INDUCED BY COP IN A 0.3-MICRON-TECHNOLOGY NODE DRAM

The influence of a crystal originated pit (COP) on the deep sub-micron dynamic-random-access-memory (DRAM), was clarified by the investigati on of the defective memory cells using 0.3 microns process test-elemen t-group (TEG) which can operate as an actual DRAM. COP constrains the growth of held oxide film and leads to degradation of the isolation ch aracteristics between the adjacent memory cells.