BORON-DIFFUSION IN NITRIDED-OXIDE GATE DIELECTRICS LEADING TO HIGH SUPPRESSION OF BORON PENETRATION IN P-MOSFETS

Nitrided-oxide gate dielectrics have been proposed to suppress boron p enetration in deep submicron metal-oxide-semiconductor field effect tr ansistors (MOSFETs). However, few quantitative reports have been relea sed on how nitrided oxides enlarge the permissible thermal budget. We evaluated the diffusivities of a nitrided oxide formed by annealing Si O2 in NO gas and demonstrated that this film enables us to use BF2+ fo r scaled devices. We also proposed a model depicting boron penetration through the nitrided-oxide layer.