EPITAXIAL SI ON AL2O3 FILMS GROWN WITH O-2 GAS BY THE ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION METHOD

By an improved Al2O3 (100) growth on Si(100) using O-2 gas instead of N2O gas, high-crystalline quality silicon on insulates (SOI) and multi stacked SOI structures were successfully fabricated on a 2-inch Si(100 ) wafer by the ultrahigh-vacuum chemical vapor deposition (UHV-CVD) me thod. The surface morphology of the Si top layer of the fabricated SOI structure is better than that of the silicon on sapphire (SOS) struct ure grown by the UHV-CVD method. The transistor action was confirmed f rom the electrical properties of the MOSFET, and the field effect mobi lity of 748 cm(2)/V s was obtained. These results were similar to thos e obtained from bulk Si. This improved Si top layer of SOI and multist acked SOI structures is due to the improved surface morphology and cry stalline quality of the Al2O3 layer grown on Si with O-2 gas.