ENHANCED CURRENT-VOLTAGE CHARACTERISTICS OF AL0.25GA0.75AS IN(0.25)GA(0.75)AS/GAAS P-HEMT USING AN INVERTED DOUBLE-CHANNEL STRUCTURE/

An inverted double channel Al0.25Ga0.75As/In0.25Ga0.75As/GaAs pseudomo rphic high electron mobility transistor (PHEMT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) has been demonstrate d for the first time. The inverted double channel heterostructure show s a high two-dimensional electron gas (2-DEG) concentration of 4.53 x 10(12)cm(-2) along with a large mobility of 5010 cm(2)/Vs at 300 K, re spectively. The fabricated P-HEMT device with a gate dimension of 1.8 x 200 mu m(2) shows a maximum drain current of as high as 820 mA/mm an d a maximum extrinsic transconductance of 320 mS/mm at 300 K. Also, ex trinsic transconductance is sustained over a wide range of gate voltag es from -2.0 V to 1.8 V. In addition, a high two-terminal gate-drain r everse breakdown voltage of -17 V is obtained. The results obtained sh ow a great potential of the inverted double channel P-HEMT for power a pplications.