INDEX-GUIDE GAINNAS LASER-DIODE FOR OPTICAL COMMUNICATIONS

Citation
S. Nakatsuka et al., INDEX-GUIDE GAINNAS LASER-DIODE FOR OPTICAL COMMUNICATIONS, JPN J A P 1, 37(3B), 1998, pp. 1380-1382
Citations number
4
Categorie Soggetti
Physics, Applied
Volume
37
Issue
3B
Year of publication
1998
Pages
1380 - 1382
Database
ISI
SICI code
Abstract
An AlGaAs/GaAs/GaInNAs single-quantum-well real-index-guide laser diod e with a ridged waveguide structure was fabricated. A threshold curren t of 24 mA under room-temperature continuous-wave operation was attain ed with this structure. Obtained device parameters show that this devi ce shows promise for application in optical communication system.