WAFER BONDING OF INP TO SI AND ITS APPLICATION TO OPTICAL-DEVICES

Wafer bonding technology has been investigated to integrate InP lasers on Si wafers for optoelectronic integrated circuits. Room temperature continuous-wave (CW) operation of edge-emitting lasers and photo-pump ed operation of surface-emitting lasers have been achieved. A novel bo nding process which allows an integration of the optical devices on st ructured wafers, such as Si LSI wafers, has also been proposed. The wa fer bonding is thought to be a promising technique to implement optica l interconnections between Si LSI chips.