ABSORPTION-COEFFICIENT MEASUREMENTS OF MGZNCDSE II-VI COMPOUNDS ON INP SUBSTRATES AND QUANTUM-CONFINED STARK-EFFECT IN ZNCDSE MGZNCDSE MULTIPLE-QUANTUM WELLS/

Selective removal of the InP substrates of MgZnCdSe LI-VI compound sam ples by chemical etching using HCl:H3PO4 solutions was investigated fo r the first time. Using a selective removal technology, the absorption coefficients of the MgZnCdSe layers were estimated from the optical t ransmission measurements at room temperature. Furthermore, the bandgap energies of MgZnCdSe were obtained as a function of the Mg compositio n by fitting the theoretical absorption coefficients to the experiment al values. In addition, for ZnCdSe/MgZnCdSe multiple quantum well (MQW ) samples, absorption coefficient variations due to the quantum confin ed Stark effect (QCSE) were observed near the absorption edge of the M QW by applying an electric field.