POLARIZATION CHARACTERISTICS OF CRESCENT-SHAPED TENSILE-STRAINED GAASP ALGAAS QUANTUM WIRE-LIKE LASERS/

Citation
M. Ishikawa et al., POLARIZATION CHARACTERISTICS OF CRESCENT-SHAPED TENSILE-STRAINED GAASP ALGAAS QUANTUM WIRE-LIKE LASERS/, JPN J A P 1, 37(3B), 1998, pp. 1556-1558
Citations number
8
Categorie Soggetti
Physics, Applied
Volume
37
Issue
3B
Year of publication
1998
Pages
1556 - 1558
Database
ISI
SICI code
Abstract
Crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire-like lasers are fabricated on V-grooved GaAs(100) substrates by metalorganic vapo r phase epitaxy. Light-output versus current characteristics, polarize d lasing spectra and near-field patterns show lasing from the quantum wires in the TM mode. The threshold current density per wire is as low as 500 A/cm(2) and the lasing wavelength is 780 nm.