M. Ishikawa et al., POLARIZATION CHARACTERISTICS OF CRESCENT-SHAPED TENSILE-STRAINED GAASP ALGAAS QUANTUM WIRE-LIKE LASERS/, JPN J A P 1, 37(3B), 1998, pp. 1556-1558
Crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire-like lasers
are fabricated on V-grooved GaAs(100) substrates by metalorganic vapo
r phase epitaxy. Light-output versus current characteristics, polarize
d lasing spectra and near-field patterns show lasing from the quantum
wires in the TM mode. The threshold current density per wire is as low
as 500 A/cm(2) and the lasing wavelength is 780 nm.