PERFECT SPATIAL ORDERING OF SELF-ORGANIZED INGAAS ALGAAS QUANTUM DISKS ON GAAS (311)B SUBSTRATE WITH SILICON-NITRIDE DOT ARRAY/

To control the position of self-organized InGaAs/AlGaAs quantum disks on a GaAs (311)B substrate, the use of fine silicon nitride dot array was examined. The pentagonally shaped hollow arrays were formed on the metal-organic vapor phase epitaxy grown AlGaAs layer by buried SiN do ts due to the competition between the facet and the lateral growth. Th e following InGaAs layer grew preferentially in these hollows and self -organized quantum disks were formed during growth interruption. Succe ssive growth of AlGaAs/InGaAs epi-layers induced the stacking of quant um disks right on top of the bottom disks. The upper quantum disks wer e perfectly spatially ordered when the pitch of the array was matched with the self-organized growth mode, with a simultaneous achievement o f lateral positioning.