ROOM-TEMPERATURE NB-BASED SINGLE-ELECTRON TRANSISTORS

Room temperature operation of Nb/Nb oxide-based single-electron transi stors (SETs) was successfully achieved and was reported in detail. Fir st, the SETs were fabricated using a scanning probe microscope (SPM)-b ased anodic oxidation technique and then the junction al ea was furthe r reduced by thermal oxidation. Ultra-small tunnel junctions were easi ly obtained by utilizing these two types of oxidation processes, and c lear single-electron charging effects were observed through the Nb/Nb oxide-based SETs at room temperature.