INFLUENCE OF GAMMA-X RESONANCE ON PHOTOCURRENT-VOLTAGE CHARACTERISTICS IN GAAS INALAS STRAINED SUPERLATTICES/

Authors
KUROYANAGI K OHTANI N EGAMI N TOMINAGA K NAKAYAMA M
Citation
K. Kuroyanagi et al., INFLUENCE OF GAMMA-X RESONANCE ON PHOTOCURRENT-VOLTAGE CHARACTERISTICS IN GAAS INALAS STRAINED SUPERLATTICES/, JPN J A P 1, 37(3B), 1998, pp. 1650-1653
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
37
Issue
3B
Year of publication
1998
Pages
1650 - 1653
Database
ISI
SICI code
Abstract
We have investigated the influence of Gamma-X resonance on the photocu rrent-voltage characteristics in GaAs/InAlAs type-I strained superlatt ices. To explain the experimental results, we have calculated the ener gies of the Gamma and X electron states, which are confined in the GaA s and InAlAs layers, respectively, using an effective-mass approximati on taking into account the strain effect. We conclude that the Gamma 1 -X1(xy) resonance causes peaky profiles in the photocurrent-voltage ch aracteristics.