A novel approach to strain control in crystalline structures is propos
ed, which utilizes surface acoustic wave excitation at varying acousti
c amplitudes, W. Strain variation is achieved by the dynamic pressure
of the phonon flow, which is proportional to W-2. Application of surfa
ce acoustic waves to strained semiconductor heterostructure caused a d
rastic reduction in the curvature of the atomic planes: a bent crystal
became practically flat under a certain W value. Detailed data on pho
non pressure effect on the curvature and the interplanar spacings were
obtained by using high-resolution X-ray diffraction. (C) 1998 Elsevie
r Science B.V.