LASER BUMPING PROCESS FOR GAAS DEVICES

Citation
D. Metzger et H. Reichl, LASER BUMPING PROCESS FOR GAAS DEVICES, Microelectronics, 28(4), 1997, pp. 475-487
Citations number
28
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00262692
Volume
28
Issue
4
Year of publication
1997
Pages
475 - 487
Database
ISI
SICI code
0026-2692(1997)28:4<475:LBPFGD>2.0.ZU;2-F
Abstract
Laser chemical vapour deposition with an organometallic gold compound was used to deposit gold bumps from the vapour phase, called laser bum ping. Laser bumping is a novel process in microelectronics and packagi ng technologies and can be used for single chip bumping. The laser dep osition of gold bumps was also demonstrated for bonding applications. The laser bumping process is suggested both for flip chip and tape aut omated bond attachment. It is a flexible approach involving a computer controlled laser deposition system. Process equipment for plating and photolithographic tooling is not necessary. Single chip bumping of de vices with reduced pitches and pad sizes is possible. This paper descr ibes our work on a controlled bumping process with respect to bonding applications. GaAs devices were laser bumped and flip chip thermo-comp ression bonded onto test ceramic substrates. (C) 1997 Elsevier Science Ltd.