SIMULATION OF SILICON ETCHING WITH KOH

Authors
CAMON H MOKTADIR Z
Citation
H. Camon et Z. Moktadir, SIMULATION OF SILICON ETCHING WITH KOH, Microelectronics, 28(4), 1997, pp. 509-517
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
28
Issue
4
Year of publication
1997
Pages
509 - 517
Database
ISI
SICI code
0026-2692(1997)28:4<509:SOSEWK>2.0.ZU;2-M
Abstract
Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activa tion energies are calculated and extended to the complete etch rate po lar diagram and compared to available experimental data. Finally, an a nalytical description of etch rate ratios is proposed. (C) 1997 Elsevi er Science Ltd.