BORON-DIFFUSION IN SILICON-OXIDES AND OXYNITRIDES

A new model is developed for boron diffusion in silicon oxides and oxy nitrides in which boron diffuses substitutionally for silicon atoms, a nd the role of incorporated nitrogen is to occlude diffusion pathways. A Monte Carlo simulation based on this model, when compared to a seri es of experiments on p-MOS-type structures, accurately accounts for lo wered diffusivities due to incorporated nitrogen.