Na. Yao et H. Cachet, CHARGE-TRANSFER KINETICS AND STABILIZATIO N AT THE N-GAAS AQUEOUS ANDNON-AQUEOUS ELECTROLYTE INTERFACE/, Journal de chimie physique et de physico-chimie biologique, 95(5), 1998, pp. 1118-1133
The effects of electrolyte composition (solvent. redox species...) are
analyzed with respect to the charge transfer process at a semiconduct
or/electrolyte interface (SC/EL). A correlation between charge transfe
r and stabilization is established for gallium arsenide (GaAs) in cont
act with different solvents. according to the redox couple reducing ab
ility. It is shown that the charge transfer kinetics at n-GaAs/electro
lyte junctions mainly depends on the redox couple position in the gap
of the semiconductor, in agreement with the Marcus-Gerischer theory, T
he experimental study takes benefit of the redox properties of the het
eropolyanion P2W18O626-.