CHARGE-TRANSFER KINETICS AND STABILIZATIO N AT THE N-GAAS AQUEOUS ANDNON-AQUEOUS ELECTROLYTE INTERFACE/

Authors
Citation
Na. Yao et H. Cachet, CHARGE-TRANSFER KINETICS AND STABILIZATIO N AT THE N-GAAS AQUEOUS ANDNON-AQUEOUS ELECTROLYTE INTERFACE/, Journal de chimie physique et de physico-chimie biologique, 95(5), 1998, pp. 1118-1133
Citations number
35
Categorie Soggetti
Biology,"Chemistry Physical
Volume
95
Issue
5
Year of publication
1998
Pages
1118 - 1133
Database
ISI
SICI code
Abstract
The effects of electrolyte composition (solvent. redox species...) are analyzed with respect to the charge transfer process at a semiconduct or/electrolyte interface (SC/EL). A correlation between charge transfe r and stabilization is established for gallium arsenide (GaAs) in cont act with different solvents. according to the redox couple reducing ab ility. It is shown that the charge transfer kinetics at n-GaAs/electro lyte junctions mainly depends on the redox couple position in the gap of the semiconductor, in agreement with the Marcus-Gerischer theory, T he experimental study takes benefit of the redox properties of the het eropolyanion P2W18O626-.