IRRADIATION EFFECTS OF 35 MEV LITHIUM AND 70 MEV OXYGEN IONS ON THE HOLE LIFETIME AND THE FORWARD CURRENT OF SILICON DIODES

Authors
SATHYAVATHI P BHAVE PS BHORASKAR VN
Citation
P. Sathyavathi et al., IRRADIATION EFFECTS OF 35 MEV LITHIUM AND 70 MEV OXYGEN IONS ON THE HOLE LIFETIME AND THE FORWARD CURRENT OF SILICON DIODES, Solid state communications, 106(11), 1998, pp. 755-758
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
106
Issue
11
Year of publication
1998
Pages
755 - 758
Database
ISI
SICI code
0038-1098(1998)106:11<755:IEO3ML>2.0.ZU;2-3
Abstract
Silicon diodes were irradiated with 35 MeV lithium or 70 MeV oxygen io ns to reduce the lifetime of holes near or far from the junction. The I-V plots below 0.5 V showed an increment in the current almost by two orders of magnitude in the lithium ion irradiated diodes only. Result s indicate that the diode current is tailored by the defects near the junction. (C) 1998 Published by Elsevier Science Ltd.