PHOTOCONDUCTION IN THIN-FILMS OF A LADDER-TYPE POLY-PARA-PHENYLENE

Stationary photoconductivity has been measured on typically 100 nm thi ck films of a methyl-substituted ladder-type poly-para-phenylene sandw iched between indium-tin oxide (ITO) and aluminium (Al) electrodes. Th ree contributions to photocarrier production have been identified: (1) hole injection from the ITO and the Al-anode via dissociation of sing let excitons; (2) intrinsic carrier production via relaxed S-1 exciton s; and (3) intrinsic photogeneration via non-relaxed electronic states excited by photons with an energy of 1.1 eV above the S-1 <-- S-0 0-0 absorption band. The intrinsic photoionization yield increases strong ly with electric field but is virtually independent of temperature, at variance with the prediction of the conventional Onsager theory of ge minate pair dissociation. (C) 1998 Published by Elsevier Science B.V. All rights reserved.