A NOVEL SELF-ALIGNED BIDIRECTIONAL MIM DIODE WITH TRANSPARENT JUNCTIONS FOR AM-LCD

A novel self-aligned bidirectional Metal-Insulator-Metal (MIM) diode w ith transparent junctions is proposed and fabricated. The MIR?I diode is formed by a combination of Ta/TaOx/ITO/TaOx/Ta. In this structure, both symmetrical and shift-free I-V characteristics are obtained. The symmetrical I-V characteristics are attributed to the excellent symmet ry in the diode structure. The significant reduction of the shift in t he I-V characteristics is a result of the removal of the charges captu red by the traps in the TaOx layers and at the interfaces between the TaOx and the electrodes during electrical stress, Only three masks are needed for the fabrication of the MIM diode pixel, which is as simple as the conventional approach. Moreover, the adoption of the lateral j unction approach in the structure makes it possible to be used for hig h density MIM matrix implementation over large area substrates without the need of high-resolution patterning techniques.