HIGH-POWER 10-GHZ OPERATION OF ALGAN HFETS ON INSULATING SIC

We report the first high-power RF characterization of AlGaN HFET's fab ricated on electrically insulating SIC substrates. A record total powe r of 2.3 W at 10 GHz was measured from a 1280-mu m wide HFET at V-ds = 33 V. An excellent RF power density of 2.8 W/mm was measured on a 320 -mu m wide HFET. These values are a result of the high thermal conduct ivity of SiC, relative to the typical substrate, sapphire.