A NOVEL INTEGRATED DECOUPLING CAPACITOR FOR MCM-L TECHNOLOGY

This paper discusses the design, materials, fabrication, and measureme nts of a novel integrated decoupling capacitor for MCM-L-based substra tes. Based on modeling using the Semiconductor Industry Association Ro admap. it has been estimated that 13-72 nF/cm(2) of specific decouplin g capacitance will be required for the next decade, The capacitor in t his paper addresses this need. The fabrication of the capacitor has be en achieved using filled polymer materials in thin film form, with via diameters of 100 mu m and below, through photodefinable processes. Di electric constant as high as 65 with loss tangent below 0.05 and speci fic capacitance of 22 nF/cm(2) hale been achieved. The scattering para meters were measured up to 20 GHz using a network analyzer for various capacitor structures (varying geometry and dielectric thickness) to s tudy input impedance and scaling of the devices.