DEFECT FORMATION IN GEO2-SIO2 GLASS BY UV-EXCITED POLING

We report on formation of Ge-related centers in GeO2-SiO2 glass fiber preform by poling with ArF laser excitation Electric field dependence of the induced-defect concentrations was measured by means of the opti cal absorption Several color centers such as the germanium electron-tr apped centers and the Ge E' center were induced. Concentrations of the induced germanium electron-trapped centers and Ge E' center increase with increasing the electric field. Conversion efficiency from the ger manium electron-trapped centers to the Ge E' center was found to be in dependent of the electric field. The present result strongly suggests that the poling with ArF laser excitation is effective in the present GeO2-SiO2 glass for the formation of germanium electron-trapped center s.