NUCLEATION AND GROWTH OF CRYSTALLINE SILICON FILMS ON GLASS FOR SOLAR-CELLS

Understanding nucleation and growth of crystalline Si films on glass i s of prime importance in order to tailor and optimize semiconductor pr operties for electronic devices such as solar cells. Commercial glass limits the maximum processing temperature of Si films to 600 degrees C . Solid phase and laser crystallization, or a combination of both tech niques, are thus primarily used to crystallize Si films on glass. Whil e random nucleation and growth processes always result in the formatio n of a lognormal size distribution, control of nucleation sites allows one to determine the location of grain growth or even the crystallogr aphic orientation of gains. Via sequential lateral solidification usin g a copper vapor laser, rye obtain Si crystallites on glass of several tens of mu m in length.