LASER-INDUCED CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS ON GLASS FORTHIN-FILM SOLAR-CELLS

Citation
G. Andra et al., LASER-INDUCED CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS ON GLASS FORTHIN-FILM SOLAR-CELLS, Physica status solidi. a, Applied research, 166(2), 1998, pp. 629-634
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
166
Issue
2
Year of publication
1998
Pages
629 - 634
Database
ISI
SICI code
0031-8965(1998)166:2<629:LCOAFO>2.0.ZU;2-4
Abstract
`Two different methods of laser induced crystallization for preparing large grained polycrystalline silicon thin films on glass are reported . The first one is a lateral epitactic crystallization process followi ng melting by an Ar+ laser. The second one is an explosive crystalliza tion process. Both methods lead to crystal grains of several 10 mu m i n size. The films, 200 to 500 nm thick, may be used as a seed layer fo r an epitactic thickening process leading to solar cells.