REALIZATION AND CHARACTERIZATION OF SI NANOSTRUCTURES

Laser interference patterning can be used to produce periodic silicon structures from amorphous silicon films. We demonstrate that periods d own to 210 nm and structure sizes less than 100 nm can be realized. We examine film agglomeration as a way for direct laser patterning witho ut etching. The capability of the method to produce different morpholo gies is investigated. An analytical two-dimensional thermal calculatio n is compared with the experimentally observed sizes to understand the physical limits of the process. As an extension of the method, an oxi dation step is shown to reduce the lateral dimensions of stripes witho ut interrupting them. The results indicate possible processes for the production of yet smaller structures and for the use of these films as etching masks.