COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS

Polycrystalline silicon thin-film transistors (TFTs) have been fabrica ted by using a combined fast solid phase crystallization (SPC) process followed by excimer laser annealing (ELA). The electrical characteris tics of the devices, after post-hydrogenation, show average field effe ct mobilities > 100 cm(2)/Vs and better noise performance, if compared to conventional SPC-polysilicon TFTs. A main advantage of the present ed technique is the reduced sensitivity of the device performances to the energy density used during ELA.