EDGE-DRIVEN TRANSITION IN THE SURFACE-STRUCTURE OF NANOSCALE SILICON

Citation
S. Ismailbeigi et T. Arias, EDGE-DRIVEN TRANSITION IN THE SURFACE-STRUCTURE OF NANOSCALE SILICON, Physical review. B, Condensed matter, 57(19), 1998, pp. 11923-11926
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
19
Year of publication
1998
Pages
11923 - 11926
Database
ISI
SICI code
0163-1829(1998)57:19<11923:ETITSO>2.0.ZU;2-K
Abstract
We present an ab initio exploration of the phenomena that might become important for free-standing structures of silicon as they are realize d on the nanoscale. We find that not only surface effects, but also ed ge effects are important considerations in structures of dimensions si milar to 3 nm. Specifically, for long nanoscale silicon bars, we find two competing low-energy reconstructions with a transition from one to the other as the cross section of the bar decreases. We predict that this size-dependent phase transition has a signature in the. electroni c structure of the bar but little effect on elastic properties. [S0163 -1829(98)05419-8].