S. Lopezmoraza et al., MULTIPLE-EXCITED-STATE ABSORPTION OF V2-FIELD CRYSTALS - AN AB-INITIOMODEL-POTENTIAL EMBEDDED-CLUSTER STUDY( IN LOW), Physical review. B, Condensed matter, 57(19), 1998, pp. 11974-11979
In this paper we present an ab initio model-potential embedded-cluster
study of the spin doublet excited states of V2+-doped KMgF3, KZnF3, a
nd CsCaF3 fluoroperovskites, which includes intracluster electron corr
elation and quantum-mechanical lattice effects. The discrepancies of t
he calculated ground-state absorptions to the spin doublets with avail
able experiments are systematic and amount to some 1000 cm(-1), leavin
g room for improvement of the treatment of valence electron correlatio
n. The calculated excited-state absorption spectra originating in E-2(
g) and T-2(1g) show that the broad E-2(g), T-2(1g)-->(2)A(1g) absorpti
on bands considerably overlap the potential T-4(2g)-->(4)A(2g) laser e
mission, thus establishing a mechanism for laser loss that had not bee
n considered so far in these low-field materials. The results obtained
in these V2+-doped fluoroperovskites, together with those in other d(
3)-doped low-field crystals, point out that the observed excited-state
absorption spectra may correspond to either a single absorbing excite
d state or to the superposition of electronic transitions originating
in all the different stable excited states lying below the energies us
ed for pumping. Each of these excited states becomes a channel for abs
orptions that may result in multiple laser loss mechanisms. The separa
te study of each of these channels appears to be feasible using ab ini
tio embedded-cluster methods. The conditions for the occurrence of sin
gle (T-4(2g)) versus multiple (T-4(2g), E-2(g), T-2(1g)) excited-state
absorption, and, therefore, single versus multiple loss mechanisms, a
re discussed in this paper in terms of the energy barrier to E-2(g), T
-2(1g)-->T-4(2g) nonradiative decay. [S0163-1829(98)08019-9].