ELECTRONIC-STRUCTURE OF CESE PROBED BY RESONANT PHOTOEMISSION SPECTROSCOPY - A TEST-CASE FOR THE SINGLE-IMPURITY ANDERSON HAMILTONIAN

One of the most interesting problems, in the study of the electronic s tructure of Ce compounds, is the evaluation of the intrinsic linewidth of the atomiclike Ce 4f states in low Kondo temperature compositions, in this context, the case of CeSe is of particular interest, because of the energy location of the Ce 4f(0) peak in a pseudogap formed main ly between the Se 4p and the Ce 5d density of states (DOS). This face results experimentally in the most narrow Ce 4f(0) final state so far reported (similar to 280 meV), and represents at the same time an expe rimental upper limit for the lifetime broadening of this state in low Kondo temperature compounds, and extra information useful in the refin ement of theoretical fitting of the data. We present single impurity A nderson Hamiltonian calculations which take advantage of the Ce 5d cal culated local density approximation DOS to simulate the delocalized va lence band continuum that mixes with the 4f impurity state. These calc ulations fit the experimental data and reproduce a certain degree of m ixing between the Ce 4f and Se 4p states reasonably well. [S0163-1829( 98)07819-9].