STRUCTURAL MODEL FOR THE SI(100)4X3-IN SURFACE PHASE

A model of the atomic arrangement of the Si(100)4X3-In surface phase i s proposed on the basis of the known data and the appearance of the Si (100)4X3-In surface found in the present STM study at low bias voltage s. The model incorporates a 4X1-reconstructed Si(100) substrate having every second top Si atom double row missing. Indium atoms of the over layer occupy the sites where each In atom is bended to one Si atom of top Si dimer and to two Si atoms in the lower bulklike Si(100) substra te layer. Three Si dimers and six In atoms form a unit cluster of the Si(100)4X3-In surface reconstruction. The model successfully accounts for all available experimental data.