A new and easy-to-use approach to the analysis and design of a cascode
or dual-date mixer has been developed and validated through measureme
nts made on a fabricated metal-semiconductor-field-effect-transistor (
MESFET) monolithic-microwave-integrated-circuit (MMIC) mixer. Although
simplified, it provides useful insight into mixer behavior and permit
s calculation of the optimum transistor bias points for maximum interm
ediate-frequency (IF) power. The method also can be extended to maximi
ze other mixer figures-of-merit such as isolation or intermodulation (
IM).