CONTAINERLESS GROWTH AND ANNEALING BEHAVIOR OF NIAL SINGLE-CRYSTALS

Authors
ESSMANN U HENES R HOLZWARTH U KLOPFER F BUCHLER E
Citation
U. Essmann et al., CONTAINERLESS GROWTH AND ANNEALING BEHAVIOR OF NIAL SINGLE-CRYSTALS, Physica status solidi. a, Applied research, 160(2), 1997, pp. 487-497
Citations number
40
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
160
Issue
2
Year of publication
1997
Pages
487 - 497
Database
ISI
SICI code
0031-8965(1997)160:2<487:CGAABO>2.0.ZU;2-C
Abstract
NiAl single crystals with diameters between 7 and 16 mm have been grow n by the floating-zone technique. The melting was performed by radio-f requency induction heating in a 0.7 x 10(5) Pa argon atmosphere. In th e experimental set up special care was taken to keep the residual oxyg en pressure at a very low level. The annealing behaviour of stoichiome tric crystals as revealed by the residual resistance ratio appears to be determined by thermal vacancies quenched in after the floating zone has passed.