DEVELOPMENT OF A NEW ION-BEAM DEPOSITION TECHNOLOGY FOR ULTRA-HIGH-PURITY FILM FABRICATION

A low-energy ion-beam deposition apparatus for film formation with ult ra-high purity based on a new concept has been developed. This machine can generate mass-analyzed very-low-energy ion beams with positive an d negative charges at the same time. It is possible to deposit these i ons not only simultaneously but also alternatively or independently. T he specifications of this apparatus are: 1. available positive ions ar e H, C, N, O, etc. and negative ions are H, C, O: Si, Ni, Au, etc., 2. the ion energy range covers 10 eV to 20 keV, 3. a typical ion beam cu rrent is 10 mu A (for 10 eV carbon ions with both charges) and the bea m size is 10 mm in diameter, 4. the base pressure in the deposition ch amber is of the order of 10(-8) Pa and the pressure during deposition is of the order of 10(-6) Pa. In a preliminary study, isotopically pur e carbon nitride (CxNy) films have been deposited on silicon wafers.