LOCAL NEUTRALITY CONCEPTION - FERMI-LEVEL PINNING IN DEFECTIVE SEMICONDUCTORS

The local electroneutrality manifestation in defective bulk semiconduc tors - electron (hole) chemical potential (Fermi-level) pinning near t he local neutrality level (LNL)- is researched experimentally in heavy irradiated crystals. A novel equation for the determination of the LN L-energy (E(LNL)) in semiconductors has been obtained from the princip les of quantum statistical physics of the solid state. The numerical c alculations of E(LNL) are fulfilled for a large group of semiconductor s. A striking correlation between experiment and theory is revealed.