SELF-ASSEMBLED ISLAND FORMATION OF LINBO3 BY PULSED-LASER DEPOSITION ON ALPHA-AL2O3 SUBSTRATE

LiNbO3(0001) films were grown epitaxially on alpha-Al2O3(0001) substra te by pulsed laser deposition (PLD). The initial growth of LiNbO3 film on atomically flat sapphire (alpha-Al2O3) substrates has been investi gated by atomic force microscopy (AFM) and X-ray photoelectron spectro scopy (XPS). The two-dimensional LiNbO3 layer with thickness of about 1 nm was formed before three-dimensional growth occurred. Subsequently grown islands were distributed uniformly on the terrace surface. This result indicates that the LiNbO3 grows in the Stranski-Krastanov grow th mode. Judging from X-ray 2 theta-theta diffraction (XRD) and reflec tion high-energy electron diffraction (RHEED) patterns, high quality e pitaxial film was obtained. And, the film emitted visible photolumines cence (PL) at room temperature. (C) 1998 Elsevier Science B.V.