LOW-TEMPERATURE PROCESSING OF EPITAXIAL LA1-XCAXMNO3 THIN-FILMS BY PULSED-LASER DEPOSITION

Authors
Citation
Ys. Leung et Kh. Wong, LOW-TEMPERATURE PROCESSING OF EPITAXIAL LA1-XCAXMNO3 THIN-FILMS BY PULSED-LASER DEPOSITION, Applied surface science, 129, 1998, pp. 491-495
Citations number
12
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
129
Year of publication
1998
Pages
491 - 495
Database
ISI
SICI code
0169-4332(1998)129:<491:LPOELT>2.0.ZU;2-D
Abstract
Magnetoresistive perovskite-like La0.7Ca0.3MnO3 (LCMO) thin films have been successfully grown on (100)LaAlO3 (LAO) at a relatively low subs trate temperature of 600 degrees C-750 degrees C by pulsed laser depos ition (PLD) method. Epitaxial LCMO films are obtained at deposition te mperature of 650 degrees C or above without post-annealing. The as-dep osited films grown at higher substrate temperatures showed lower resis tance and higher semiconductor-to-metal transition temperature. For fi lms post-annealed for 1 h at their respective deposition temperatures, a large reduction in their electrical resistivity and an up-shifting of their transition temperature were observed. The maximum magnetoresi stance ratio (MR), -Delta R(1 T)/R(0), for the films deposited and ann ealed at 650 degrees C and 750 degrees C were 37% and 50%,respectively . (C) 1998 Elsevier Science B.V.