ZNSE AND ZNO FILM GROWTH BY PULSED-LASER DEPOSITION

ZnSe and ZnO films have been deposited on (001) GaAs substrates under different pressures by pulsed-laser deposition (PLD) with a 193 nm las er beam. The ambient pressures were changed from 8 x 10(-6) to 5 x 10( -2) Torr with high-purity argon gas for ZnSe and oxygen gas for ZnO. X -ray diffraction (XRD) measurement was performed on these samples. The FWHM's of X-ray theta-rocking curves for the (004) peaks of ZnSe film s were less than 0.5 degrees. X-ray data show that high-quality ZnO fi lms can be also synthesized by PLD. (C) 1998 Elsevier Science B.V.