PLANAR LASER WAVE-GUIDES OF TI-SAPPHIRE, ND-GGG AND ND-YAG GROWN BY PULSED-LASER DEPOSITION

Authors
VAINOS NA GRIVAS C FOTAKIS C EASON RW ANDERSON AA GILL DS SHEPHERD DP JELINEK M LANCOK J SONSKY J
Citation
Na. Vainos et al., PLANAR LASER WAVE-GUIDES OF TI-SAPPHIRE, ND-GGG AND ND-YAG GROWN BY PULSED-LASER DEPOSITION, Applied surface science, 129, 1998, pp. 514-519
Citations number
17
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
129
Year of publication
1998
Pages
514 - 519
Database
ISI
SICI code
0169-4332(1998)129:<514:PLWOTN>2.0.ZU;2-D
Abstract
Highly efficient laser action is demonstrated in epitaxially grown Nd: GGG and Ti:sapphire layers. Waveguide losses as low as 0.5 dB/cm are a chieved in films of low particulate content, high homogeneity and impr oved surface morphology obtained by optimized pulsed laser deposition (PLD) configurations. Low threshold laser emission is observed at 800 nm for Ti:sapphire, and at 1060 nm and 937 nm for Nd:GGG waveguides, w ith slope efficiencies of 26% and 20% respectively. These results veri fy the versatility of PLD schemes in the fabrication of novel optoelec tronic structures. (C) 1998 Elsevier Science B.V.